Investigation of structural changes in shock compressed III-V materials-Reference-Cited by-同舟云学术

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Investigation of structural changes in shock compressed III-V materials

Published:2022-03-04 Issue: Volume: Page:
ISSN:
Container-title:Physics and Simulation of Optoelectronic Devices XXX
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Author:

Bhowmick Mithun,Zhou Xuan,Ramkumar Chari

Publisher

SPIE

Reference29 articles.

1. Band Structure of the Intermetallic Semiconductors from Pressure Experiments

2. High pressure semiconductor physics: Looking toward the future on the shoulder of the past

3. Physical behavior of germanium under shock wave compression

4. Acoustical-Optical Phonon Scattering in Ge, Si, and III-V Compounds

5. Semiconductor-to-metal transition in GaP under high pressure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photon Doppler velocimetry in interdisciplinary shock compression studies;2022 IEEE Research and Applications of Photonics in Defense Conference (RAPID);2022-09

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