Heterointerface point defects in GaN/AlN quantum wells-Reference-Cited by-同舟云学术

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Heterointerface point defects in GaN/AlN quantum wells

Published:2018-07-14 Issue:04 Volume:12 Page:1
ISSN:1934-2608
Container-title:Journal of Nanophotonics
language:
Short-container-title:J. Nanophoton.

Author:

Lebiadok Yahor V.¹,Razumets Alena A.¹,Bezyazychnaya Tatyana V.²,Aleksandrov Ivan A.³,Zhuravlev Konstantin S.³

Affiliation:

1. State Scientific and Production Association “Optics, Optoelectronics and Laser Technology”, Laborato

2. Institute of Physical Organic Chemistry, Laboratory of Ion Exchange and Sorption, Minsk

3. Rzhanov Institute of Semiconductor Physics, Laboratory of MBE Growth of III–V Semiconductor, Novosib

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. AlxGa1−xN/GaN/AlN heterostructures grown on Si(111) substrates by MBE for MSM UV photodetector applications

3. Ultrafast GaN/AlN modulator based on quantum dot for terabit all-optical communication

4. Relaxation in crack-free AlN/GaN superlattices

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