Comparison of quantum dot lasers with and without tunnel-injection quantum well
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Reference20 articles.
1. High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser
2. Temperature stability of static and dynamic properties of 155 µm quantum dot lasers
3. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
4. InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)
5. Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the principle operation of tunneling injection quantum dot lasers;Progress in Quantum Electronics;2021-09
2. Resonant and Nonresonant Tunneling Injection Processes in Quantum Dot Optical Gain Media;ACS Photonics;2020-02-27
3. On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells;Novel In-Plane Semiconductor Lasers XIX;2020-02-24
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