Author:
Xu Yongan,Faure Tom,Viswanathan Ramya,Lobb Granger,Wistrom Richard,Burns Sean,Hu Lin,Graur Ioana,Bleiman Ben,Fischer Dan,Mignot Yann,Sakamoto Yoshifumi,Toda Yusuke,Bolton John,Bailey Todd,Felix Nelson,Arnold John,Colburn Matthew
Reference6 articles.
1. Process margin improvement using custom transmission EAPSM reticles
2. Development of new high transmission eaPSM for Negative Tone Development process on wafer;Adachi,2015
3. 48nm Pitch cu dual-damascene interconnects using self-aligned double patterning scheme;Chen,2013
4. Comparative study on MEEF and dose latitude between attenuated PSM and Cr binary mask;Cho,2000
5. Lithographic qualification of new opaque MoSi binary mask blank for the node and beyond
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献