1. Claeys, C. and Simoen, E., “Silicon-based cryogenic electronics: From physical curiosity to quantum computing,” in [Proceedings-Electrochemical Society], 100–117, Electrochemical Society (2003).
2. Martin, P. and Guellec, F., “MOSFET modeling for simulation, design and optimization of infrared CMOS image sensors working at cryogenic temperature,” in [Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference], 103–106 (June 2011).
3. MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18μm CMOS process
4. A low power cryogenic 512×512-pixel infrared readout integrated circuit with modified MOS device model
5. Low-Power and Compact CMOS APS Circuits for Hybrid Cryogenic Infrared Fast Imaging