Transitioning large-diameter Type II Superlattice detector wafers to manufacturing-Reference-Cited by-同舟云学术

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Transitioning large-diameter Type II Superlattice detector wafers to manufacturing

Published:2018-06-21 Issue: Volume: Page:
ISSN:
Container-title:Infrared Technology and Applications XLIV
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Author:

Forrai Dave,Jones Robert,Garter Michael,Wei Yajun,Allen Steven,Couch Laura

Publisher

SPIE

Reference2 articles.

1. Relationship between wafer edge design and its ultimate mechanical strength

2. Implementing VISTA technology in a III-V detector foundry;Forrai,2017

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors;Opto-Electronics Review;2024-01-03

2. High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength;Opto-Electronics Review;2024-01-03

3. Modelling metastructures for quantum efficiency enhancement in long-wavelength infrared InAs/GaSb type-II superlattice detectors: A case study;Infrared Physics & Technology;2023-12

4. Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors;Journal of Applied Physics;2022-11-28

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