A study of patterning 36nm-pitch logic contact holes in a metal oxide resist using a high-reflectance phase-shifting mask that results in image reversal-Reference-Cited by-同舟云学术

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A study of patterning 36nm-pitch logic contact holes in a metal oxide resist using a high-reflectance phase-shifting mask that results in image reversal

Published:2022-12-01 Issue: Volume: Page:
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Container-title:Photomask Technology 2022
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Author:

Tseng Shih En,Chen Chun-Kuang,Nam Dong-Seok,Lin Will,Yen Anthony

Publisher

SPIE

Reference14 articles.

1. Optical and EUV Lithography: A Modeling Perspective

2. Complex two-dimensional pattern lithography using chromeless phase lithography

3. Through pitch low-k1 contact hole imaging with CPLTM technology;Wiaux,2004

4. Mask-absorber optimization: the next phase

5. Optical design of EUV attenuated PSM for contact-hole applications;Ahn,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Source mask optimization (SMO) study for high-NA EUV lithography to achieve single patterning on random logic metal;DTCO and Computational Patterning III;2024-04-10

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