New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors-Reference-Cited by-同舟云学术

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New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

Published:2014-02-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
language:
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Author:

Broell Markus,Sundgren Petrus,Rudolph Andreas,Schmid Wolfgang,Vogl Anton,Behringer Martin

Publisher

SPIE

Reference6 articles.

1. Plant Productivity in Response to LED lighting;Massa,2008

2. Color temperature tunable white-light light-emitting diode clusters with high color rendering index

3. Recent progress of AlGaInP thin-film light-emitting diodes;Wirth,2003

4. InGaAlP Thinfilm with high luminous efficiency;Windisch,2004

5. Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes

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1. Tin-Halide Perovskites for Near-Infrared Light-Emitting Diodes;ACS Energy Letters;2024-05-10

2. Solution-Phase Ligand Engineering for All-Quantum-Dot Near-Infrared Light-Emitting Diodes;ACS Applied Nano Materials;2024-04-06

3. Improvement of optical properties of InGaN-based red multiple quantum wells;Optics Express;2023-05-18

4. Performance improvement of AlGaInP based red LEDs by combination of omnidirectional mirror and AuZn micro-contacts;Results in Physics;2023-01

5. Improving the efficiency of near-IR perovskite LEDs via surface passivation and ultrathin interfacial layers;Cell Reports Physical Science;2022-12

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