In-situheight engineering of InGaAs / GaAs quantum dots by chemical beam epitaxy-Reference-Cited by-同舟云学术

In-situheight engineering of InGaAs / GaAs quantum dots by chemical beam epitaxy

Published:2016-02-18 Issue:3 Volume:10 Page:033502
ISSN:1934-2608
Container-title:Journal of Nanophotonics
language:en
Short-container-title:J. Nanophoton

Author:

Zribi Jihene¹,Morris Denis¹,Ilahi Bouraoui²,Aldhubaib Amal²,Aimez Vincent¹,Ares Richard¹

Affiliation:

1. Université de Sherbrooke, Laboratoire Nanotechnologies Nanosystèmes (LN2)–CNRS UMI-3463, Institut Interdisciplinaire d’Innovation Technologique, Sherbrooke, J1K OA5 Quebec, Canada

2. King Saud University, College of Sciences, Department of Physics and Astronomy, P.O. Box No. 2455, 11451 Riyadh, Saudi Arabia

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Long wavelength transverse magnetic polarized absorption in 1.3 µm InAs/InGaAs dots-in-a-well type active regions

2. InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding

3. Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source

4. Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

5. Quantum dot superluminescent diodes emitting at 1.3 /spl mu/m

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1. Excitation Transfer in Hybrid Nanostructures of Colloidal Ag2S/TGA Quantum Dots and Indocyanine Green J-Aggregates;Journal of Fluorescence;2020-03-31

2. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography;Materials;2016-06-24

3. In-situheight engineering of InGaAs / GaAs quantum dots by chemical beam epitaxy;Journal of Nanophotonics;2016-02-18