Mix-and-match considerations for EUV insertion in N7 HVM-Reference-Cited by-同舟云学术

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Mix-and-match considerations for EUV insertion in N7 HVM

Published:2017-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Chen Xuemei¹,Gabor Allen¹,Samudrala Pavan¹,Meyers Sheldon¹,Hosler Erik¹,Johnson Richard²,Felix Nelson²

Affiliation:

1. GLOBALFOUNDRIES Inc. (United States)

2. IBM Research (United States)

Publisher

SPIE

Reference8 articles.

1. EUV lithography: present and future;Levinson,2016

2. ITRS 2013

3. EUV lithography performance for manufacturing: status and outlook;Pirati,2016

4. Minimizing Wafer Overlay Errors due to EUV Mask Non-Flatness and Thickness Variations for 7nm Production;Chen,2017

5. Experimental Approach to EUV Imaging Enhancement by Mask Absorber Height Optimization;Davydova,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pattern deformation mitigation for EUV photoresists using wafer backside cleaning techniques;Japanese Journal of Applied Physics;2024-03-01

2. Photoresist stochastic defect generation depending on alkyl chain length and concentration of tetraalkylammonium hydroxide in alkali aqueous developer;Japanese Journal of Applied Physics;2023-03-23

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