Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography-Reference-Cited by-同舟云学术

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Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography

Published:2015-04-20 Issue:4 Volume:54 Page:045103
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Ni Ri Wen¹,Zeng Bi Jian²,Huang Jun Zhu¹,Luo Teng²,Li Zhen²,Miao Xiang Shui²

Affiliation:

1. Huazhong University of Science and Technology, School of Optical and Electronic Information, Room 118, Building of West 1, Wuhan 430074, China

2. Huazhong University of Science and Technology, School of Optical and Electronic Information, Room 118, Building of West 1, Wuhan 430074, ChinabHuazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, Room 118, Building

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference31 articles.

1. Localized States in the Gap of Amorphous Semiconductors

2. Phase Change Materials and Their Application to Nonvolatile Memories

3. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology

4. Arithmetic and Biologically-Inspired Computing Using Phase-Change Materials

5. Phase-change materials for rewriteable data storage

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanopatterning of GeTe phase change films via heated-probe lithography;Nanoscale;2017

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