Pattern collapse solution for asymmetric pattern

Author:

Tu C. J.1,Huang C. H.1,Yang Elvis1,Yang T. H.1,Chen K. C.1

Affiliation:

1. Macronix International Co., Ltd. (Taiwan)

Publisher

SPIE

Reference6 articles.

1. A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties

2. Revisit Pattern Collapse for 14nm Node and Beyond;Kenji,2011

3. Understanding Pattern Collapse in High-Resolution Lithography: Impact of Feature Width on Critical Stress;Noga,2009

4. Effect of the rinse solution to avoid 193 nm resist line collapse: A study for modification of resist polymer and process conditions;Seiya,2004

5. Collapse behavior of single layer 193 and 157 nm resists: Use of surfactants in the rinse to realize the sub 130 nm nodes;Hiena,2002

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A review of recent advances in fabrication of optical Fresnel lenses;Journal of Manufacturing Processes;2021-11

2. Enabling EUV pattern transfer by optimized under layer;Advances in Patterning Materials and Processes XXXVIII;2021-02-22

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