Characterization of CD-SEM metrology for iArF photoresist materials-Reference-Cited by-同舟云学术

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Characterization of CD-SEM metrology for iArF photoresist materials

Published:2008-03-14 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Bunday Benjamin,Cordes Aaron,Orji N. G.,Piscani Emil,Cochran Dan,Byers Jeff,Allgair John,Rice Bryan J.,Avitan Yohanan,Peltinov Ram,Bar-zvi Maayan,Adan Ofer

Publisher

SPIE

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the Electron Beam Effect on Critical Sizes of Photoresistive Mask Elements in SEM Measurements;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

2. Tracing optimized condition for electron beam metrology of EUV photoresist pattern using low-landing energy;Metrology, Inspection, and Process Control XXXVII;2023-04-27

3. Tracing optimized condition for electron beam metrology of EUV photoresist pattern using low landing energy;Metrology, Inspection, and Process Control XXXVII;2023-04-27

4. High-repeatability and low-shrinkage solution using CD-SEM for EUV resist;Metrology, Inspection, and Process Control XXXVII;2023-04-27

5. Observing secondary-electron yield and charging in an insulating material by ultralow-voltage scanning electron microscope;Journal of Vacuum Science & Technology B;2022-01

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