Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography-Reference-Cited by-同舟云学术

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Published:2014-10-16 Issue:4 Volume:13 Page:043002
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Singh Vikram¹,Satyanarayana Vardhineedi Sri Venkata²,Batina Nikola³,Reyes Israel Morales³,Sharma Satinder K.¹,Kessler Felipe⁴,Scheffer Francine R.⁴,Weibel Daniel E.⁴,Ghosh Subrata²,Gonsalves Kenneth E.²

Affiliation:

1. Indian Institute of Technology Mandi, School of Computing and Electrical Engineering, Mandi, Himachal Pradesh 175001, India

2. Indian Institute of Technology Mandi, School of Basic Sciences, Mandi, Himachal Pradesh 175001, India

3. Depto. de Química, Lab. de Nanotecnología e Ingeniería Molecular, CBI, UAM-I, Mexico D.F., Mexico

4. Universidade Federal do Rio Grande do Sul, UFRGS, Instituto de Química, Avenida Bento Gonçalves 9500, P.O. Box 15003, 91501-970 Porto Alegre, RS, Brazil

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. The international technology roadmap for semiconductors,2014

2. Materials challenges for sub-20-nm lithography

3. Critical challenges for EUV resist materials

4. Performance of chemically amplified resists at half-pitch of 45 nm and below

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