Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure-Reference-Cited by-同舟云学术

Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Nagahara Seiji¹,Carcasi Michael²,Shiraishi Gosuke³,Nakagawa Hisashi⁴,Dei Satoshi⁵,Shiozawa Takahiro⁶,Nafus Kathleen⁷,De Simone Danilo⁸,Vandenberghe Geert⁸,Stock Hans-Jürgen⁹,Küchler Bernd⁹,Hori Masafumi⁵,Naruoka Takehiko⁴,Nagai Tomoki⁴,Minekawa Yukie³,Iseki Tomohiro³,Kondo Yoshihiro³,Yoshihara Kosuke³,Kamei Yuya⁶,Tomono Masaru³,Shimada Ryo³,Biesemans Serge¹⁰,Nakashima Hideo¹,Foubert Philippe⁸,Buitrago Elizabeth¹¹,Vockenhuber Michaela¹¹,Ekinci Yasin¹¹,Oshima Akihiro¹²,Tagawa Seiichi¹²

Affiliation:

1. Tokyo Electron Ltd. (Japan)

2. Tokyo Electron America, Inc. (United States)

3. Tokyo Electron Kyushu Ltd. (Japan)

4. JSR Corp. (Japan)

5. JSR Micro N.V. (Belgium)

6. Tokyo Electron Kyushu Ltd. (Belgium)

7. Tokyo Electron America, Inc. (Belgium)

8. IMEC (Belgium)

9. Synopsys GmbH (Germany)

10. Tokyo Electron Europe Ltd. (Belgium)

11. Paul Scherrer Institut (Switzerland)

12. Osaka Univ. (Japan)

Publisher

SPIE

Reference28 articles.

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2. EUV resists: What’s next?;Lio,2016

3. Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region

4. Methods to Improve Radiation Sensitivity of Chemically Amplified Resists by Using Chain Reactions of Acid Generation;Nagahara,2000

5. Line-Edge Roughness and the Impact of Stochastic Processes on Lithography Scaling for Moore’s Law;Mack,2014

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