Semi-insulating GaP as a material for manufacturing photoconductive semiconductor switches-Reference-Cited by-同舟云学术

Semi-insulating GaP as a material for manufacturing photoconductive semiconductor switches

Published:2019-03-27 Issue: Volume: Page:
ISSN:
Container-title:XII Conference on Reconnaissance and Electronic Warfare Systems
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Author:

Suproniuk Marek,Kamiński Paweł,Kozłowski Roman,Teodorczyk Marian,Mirowska Aleksandra,Majda-Zdancewicz Ewelina,Wierzbowski Mariusz,Piwowarski Karol,Paziewski Piotr

Publisher

SPIE

Reference14 articles.

1. Current state of photoconductive semiconductor switch engineering

2. Current status of modelling the semi-insulating 4H–SiC transient photoconductivity for application to photoconductive switches

3. Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC

4. 30kV and 3kA semi-insulating GaAs photoconductive semiconductor switch

5. Analysis of operation mechanism of semi-insulating GaAs photoconductive semiconductor switches

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4. Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP;Radioelectronic Systems Conference 2019;2020-02-11

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