Bridging the defect gap in EUV photoresist-Reference-Cited by-同舟云学术

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Bridging the defect gap in EUV photoresist

Published:2019-03-25 Issue: Volume: Page:
ISSN:
Container-title:Advances in Patterning Materials and Processes XXXVI
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Author:

Kohyama Tetsu,Kaneko Fumiya,Gjoka Alketa,Jaber Jad

Publisher

SPIE

Reference10 articles.

1. The filter adsorption mechanism in photo resist materials;Kohyama,2012

2. Evaluation of high-resolution and sensitivity of n-CAR hybrid resist for sub-16nm or below technology node;Sharma,2018

3. Evaluation of EUV resist materials for use at the 32 nm half-pitch node;Wallow,2008

4. Dynamic absorption coefficients of CAR and non-CAR resists at EUV;Fallica,2016

5. Novel EUV Resist Materials for 7nm Node and Beyond;Furutani,2018

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1. Radical-Induced Effect on PEALD SiO₂ Films by Applying Positive DC Bias;ECS Journal of Solid State Science and Technology;2022-02-01

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