InGaN frequency stabilized high-power devices for atom-cooling and trapping enabling quantum technology (Conference Presentation)-Reference-Cited by-同舟云学术

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InGaN frequency stabilized high-power devices for atom-cooling and trapping enabling quantum technology (Conference Presentation)

Published:2020-03-10 Issue: Volume: Page:
ISSN:
Container-title:Gallium Nitride Materials and Devices XV
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Author:

Prade Ludwig,Macarthur John,McKnight Loyd,Dorward William,Sharp John,Najda Stephen,Perlin Piotr,Suski Tadeusz,Marona Lucja,Stanczyk Szymon,Wisniewski Przemek,Grzanka Szymon,Schiavon Dario,Leszczyński Michal

Publisher

SPIE

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN laser diodes for quantum sensing, precision metrology, and quantum computing;Quantum Sensing, Imaging, and Precision Metrology II;2024-03-13

2. GaN laser diodes for the development of quantum sensing and timing systems;Quantum Technology: Driving Commercialisation of an Enabling Science IV;2023-11-30

3. GaN laser diodes for quantum sensing, optical atomic clocks, and precision metrology;Quantum Sensing, Imaging, and Precision Metrology;2023-03-08

4. GaN laser diodes for cold-atom sensing, optical atomic clocks and precision metrology;Emerging Imaging and Sensing Technologies for Security and Defence VII;2022-12-07

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