E-beam metrology and line local critical dimension uniformity of thin dry resist films for high numerical aperture extreme ultraviolet lithography-Reference-Cited by-同舟云学术

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E-beam metrology and line local critical dimension uniformity of thin dry resist films for high numerical aperture extreme ultraviolet lithography

Published:2023-11-17 Issue:04 Volume:22 Page:
ISSN:2708-8340
Container-title:Journal of Micro/Nanopatterning, Materials, and Metrology
language:
Short-container-title:J. Micro/Nanopattern. Mats. Metro.

Author:

Zidan Mohamed¹,Lorusso Gian Francesco²,De Simone Danilo²,De Silva Anuja³,Haider Ali³,Verveniotis Elisseos³,Moussa Alain²,De Gendt Stefan¹

Affiliation:

1. KU Leuven, Leuven, Belgium

2. imec, Leuven, Belgium

3. Lam Research BVBA, Leuven, Belgium

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Arts and Humanities

Reference14 articles.

1. Breaking stochastic tradeoffs with a dry deposited and dry developed EUV photoresist system

2. e-beam metrology of thin resist for high NA EUVL

3. The International Roadmap for Devices and Systems: lithography,2022

4. Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions

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