Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts-Reference-Cited by-同舟云学术

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Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts

Published:1997-05-02 Issue: Volume: Page:
ISSN:0277-786X
Container-title:In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
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Author:

Epperlein Peter W.

Publisher

SPIE

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers;Journal of Physics D: Applied Physics;2017-11-22

2. Novel Diagnostic Data for Diverse Laser Temperature Effects; Dynamic Laser Degradation Effects; and Mirror Temperature Maps;Semiconductor Laser Engineering, Reliability and Diagnostics;2013-01-24

3. Novel Diagnostic Laser Data for Mirror Facet Disorder Effects; Mechanical Stress Effects; and Facet Coating Instability;Semiconductor Laser Engineering, Reliability and Diagnostics;2013-01-24

4. Novel Diagnostic Laser Data for Active Layer Material Integrity; Impurity Trapping Effects; and Mirror Temperatures;Semiconductor Laser Engineering, Reliability and Diagnostics;2013-01-24

5. Optical Strength Engineering;Semiconductor Laser Engineering, Reliability and Diagnostics;2013-01-24

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