Multiple pass exposure in e-beam lithography: application to the sub-22nm nodes-Reference-Cited by-同舟云学术

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Multiple pass exposure in e-beam lithography: application to the sub-22nm nodes

Published:2010-03-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Martin L.,Manakli S.,Icard B.,Pradelles J.,Orobtchouk R.,Poncet A.,Pain L.

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Curvilinear mask process correction embedded on multi-beam mask writer;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-02-14

2. Shape-based proximity effect correction method for throughput, fidelity, and contrast enhancement of electron-beam writer;Applied Physics Express;2023-01-01

3. A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks;SPIE Proceedings;2012-06-30

4. Model based hybrid proximity effect correction scheme combining dose modulation and shape adjustments;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11

5. Efficient large volume data preparation for electron beam lithography for sub-45nm node;SPIE Proceedings;2011-10-06

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