Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells-Reference-Cited by-同舟云学术

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Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells

Published:2017-02-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Hangleiter Andreas¹,Langer Torsten¹,Henning Philipp¹,Ketzer Fedor Alexej¹,Horenburg Philipp¹,Korn Ernst Ronald¹,Bremers Heiko¹,Rossow Uwe¹

Affiliation:

1. Technische Univ. Braunschweig (Germany)

Publisher

SPIE

Reference20 articles.

1. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

2. Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance inorganic filterless narrowband photodetectors;Materials Letters;2022-12

2. Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence;Nano Letters;2021-06-04

3. Recombination dynamics in GaInN/GaN quantum wells;Semiconductor Science and Technology;2019-06-26

4. Internal quantum efficiency in polar and semipolar (11–22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red;Superlattices and Microstructures;2018-01

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