Light-emitting and photovoltaic devices based on quantum well-dots hybrid nanostructures
Author:
Affiliation:
1. St. Petersburg Academic Univ. (Russian Federation)
2. Ioffe Institute (Russian Federation)
3. Univ. of Notre Dame (United States)
Publisher
SPIE
Reference14 articles.
1. GaAs-based long-wavelength lasers
2. Long wavelength lasers on GaAs substrates;Fehse,2003
3. High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
4. High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
5. AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantum Dots;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. Highly efficient injection microdisk lasers based on quantum well-dots;Optics Letters;2018-09-17
3. Gradual Evolution From Quantum-Well-Like to Quantum-Dot-Like Characteristics in InGaAs/GaAs Nanostructures;physica status solidi (b);2018-07-05
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