Design and analysis of InN − In0.25Ga0.75N single quantum well laser for short distance communication wavelength-Reference-Cited by-同舟云学术

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Design and analysis of InN − In0.25Ga0.75N single quantum well laser for short distance communication wavelength

Published:2018-03-16 Issue:03 Volume:57 Page:1
ISSN:0091-3286
Container-title:Optical Engineering
language:
Short-container-title:Opt. Eng.

Author:

Polash Md. Mobarak Hossain¹,Alam M. Shah²,Biswas Saumya³

Affiliation:

1. North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, North C

2. Bangladesh University of Engineering and Technology, Department of Electrical and Electronic Enginee

3. University of California, Department of Electrical and Computer Engineering, Riverside, California

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference44 articles.

1. Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

2. Optical Gain in GaInNAs and GaInNAsSb Quantum Wells

3. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

4. Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

5. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

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