Scan direction induced charging dynamics and the application for detection of gate to S/D shorts in logic devices
Author:
Affiliation:
1. GLOBALFOUNDRIES (United States)
2. HermesMicrovision Inc. (United States)
Publisher
SPIE
Reference9 articles.
1. Study of Devices Leakage of 45nm node with Different SRAM Layout Using an Advanced ebeam Inspection Systems;Xiao,2009
2. Voltage Contrast for Gate-Leak Failures Detected by Electron Beam Inspection
3. Inspection of 32nm imprinted patterns with an advanced e-beam inspection system;Xiao,2009
4. E-Beam Inspection for Detection of Sub-Design Rule Physical Defects;Patterson,2012
5. Capturing buried defects in metal interconnections with electron beam inspection system
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