Improvements in resist performance towards EUV HVM-Reference-Cited by-同舟云学术

Improvements in resist performance towards EUV HVM

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Yildirim Oktay¹,Buitrago Elizabeth²,Hoefnagels Rik¹,Meeuwissen Marieke¹,Wuister Sander¹,Rispens Gijsbert¹,van Oosten Anton¹,Derks Paul¹,Finders Jo¹,Vockenhuber Michaela²,Ekinci Yasin²

Affiliation:

1. ASML Netherlands B.V. (Netherlands)

2. Paul Scherrer Institut (Switzerland)

Publisher

SPIE

Reference21 articles.

1. EUV lithograpy performance for manufacturing: status and outlook;Pirati,2016

2. EUV High-NA scanner and mask optimization for sub 8 nm resolution;Van Schoot,2016

3. Demonstration of an N7 integrated fab process for metal oxide EUV photoresist;De Simone,2016

4. Evaluation of EUV resist materials for use at the 32 nm half-pitch node;Wallow,2008

5. Materials challenges for sub-20-nm lithography

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