Recent advances on long wave p on n HgCdTe infrared technology-Reference-Cited by-同舟云学术

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Recent advances on long wave p on n HgCdTe infrared technology

Published:2017-01-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Rubaldo Laurent¹,Taalat Rachid¹,Berthoz Jocelyn¹,Maillard Magalie¹,Péré-Laperne Nicolas¹,Brunner Alexandre¹,Guinedor Pierre¹,Dargent L.¹,Manissadjian A.¹,Reibel Y.¹,Kerlain A.¹

Affiliation:

1. SOFRADIR (France)

Publisher

SPIE

Reference18 articles.

1. Electrical doping of HgCdTe by ion implantation and heat treatment

2. Latest developments on p-on-n HgCdTe architectures at DEFIR;Castelein,2014

3. Improved IR detectors to swap heavy systems for SWaP;Manissadjian,2012

4. Radiation tolerance studies of long wavelength infrared InAs/GaSb detectors;Soibel,2016

5. Radiation Damage in Type II Superlattice Infrared Detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High operating temperature p-on-n HgCdTe MWIR 1024x768 FPA detector;J INFRARED MILLIM W;2023

2. Quantum efficiency and spatial noise tradeoffs for III–V focal plane arrays;Infrared Physics & Technology;2019-03

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