Material readiness for generation 2 directed self-assembly (DSA) < 24nm pitch-Reference-Cited by-同舟云学术

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Material readiness for generation 2 directed self-assembly (DSA) < 24nm pitch

Published:2015-03-23 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Advances in Patterning Materials and Processes XXXII
language:
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Author:

Han Eungnak,Younkin Todd R.,Chandhok Manish,Myers Alan M.,Tronic Tristan A.,Gstrein Florian,Elineni Kranthi K.,Gaikwad Ashish,Nyhus Paul A.,Setu Praveen K.,Wallace Charles H.

Publisher

SPIE

Reference8 articles.

1. Dry development rinse process (DDRP) and material (DDRM) for novel pattern collapse free process.;Sakamoto,2013

2. Integration of block copolymer directed assembly with 193 immersion lithography;Liu,2010

3. Block copolymer directed self-assembly enables sublithographic patterning for device fabrication.;Wong,2012

4. Self-Assembly Patterning for sub-15nm Half-Pitch: A Transition from Lab to Fab;Bencher,2011

5. Driving DSA into Volume Manufacturing;Somervell,2015

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