Through pitch monitoring by optical scatterometry

Author:

Melzer R.,Hartig C.,Grasshof G.,Sass B.,Koch F.,Xu Z. -.,Shen Z.,Engelmann J

Publisher

SPIE

Reference5 articles.

1. Characterizing the 65nm through-pitch sensitivity to scanner;Shieh,2009

2. Scatterometry measurement precision and accuracy below 70nm in Metrology, Inspection, and Process Control for Microlithography XVII;Sendelbach,2003

3. Production control of shallow trench isolation (STI) at the 130-nm node using spectroscopic ellipsometry-based profile metrology;Peters,2004

4. Optimization of scatterometry parameters for shallow trench isolation (STI) monitor;Leray,2004

5. Impact of shrinking measurement error budgets on qualification metrology sampling and cost;Sendelbach,2014

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