Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition-Reference-Cited by-同舟云学术

Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition

Published:2015-07-15 Issue:3 Volume:14 Page:031206
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Scotuzzi Marijke¹,Kamerbeek Martin J.¹,Goodyear Andy²,Cooke Mike²,Hagen Cornelis W.¹

Affiliation:

1. Delft University of Technology, Department of Imaging Physics, Charged Particle Optics Group, Lorentzweg 1, 2628 CJ, Delft, The Netherlands

2. Oxford Instruments Plasma Technology, North End, Yatton, Bristol BS49 4AP, United Kingdom

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Approaching the Resolution Limit of Nanometer-Scale Electron Beam-Induced Deposition

2. Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si

3. Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

4. Multibeam scanning electron microscope: Experimental results

5. Electron optics of multi-beam scanning electron microscope

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