MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors
Author:
Affiliation:
1. CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
2. Agnitron Technology, Inc. (United States)
Publisher
SPIE
Reference6 articles.
1. Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film
2. Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
3. Intersubband transitions in ZnO multiple quantum wells
4. Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory
5. β-Ga2O3 growth by plasma-assisted molecular beam epitaxy
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1. Effects of ytterbium doping on the ultraviolet emissions of MgZnO films prepared by magnetron sputtering;Journal of Alloys and Compounds;2024-04
2. Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering;Applied Physics A;2021-06-30
3. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications;Journal of Physics D: Applied Physics;2020-11-02
4. High responsivity tin gallium oxide Schottky ultraviolet photodetectors;Journal of Vacuum Science & Technology A;2020-01
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