Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs And (100) Ge: A Comparative Study Of Material Quality-Reference-Cited by-同舟云学术

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Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs And (100) Ge: A Comparative Study Of Material Quality

Published:1987-04-20 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Park R. M.¹,Kleiman J.¹,Mar H. A.¹

Affiliation:

1. 3M Canada Inc. (Canada)

Publisher

SPIE

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 7 Defects and Degradation in Wide Gap II-VI Based Structures and Light-emitting Devices;Semiconductors and Semimetals;1997

2. Structural quality and the growth mode in epitaxial ZnSe/GaAs(100);Journal of Applied Physics;1993-03

3. Crystallographic tilting of heteroepitaxial layers;Journal of Crystal Growth;1991-09

4. A study of anomalously coloured regions in ZnSe grown by molecular beam epitaxy;Philosophical Magazine A;1989-05

5. Electronic Transport Properties of ZnSe Layers on GaAs;MRS Proceedings;1989

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