<title>Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers

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Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers

Published:1996-04-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Esquivias Ignacio,Romero Herrero Beatriz,Weisser S.,Czotscher Konrad,Ralston John D.,Larkins Eric C.,Arias Julia,Schoenfelder A.,Mikulla Michael,Fleissner Joachim,Rosenzweig Josef

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers;IEEE Photonics Journal;2024-04

2. Impact of Carrier Transport and Capture on VCSEL Dynamics;IEEE Journal of Quantum Electronics;2023-02

3. Circuit modeling of quantum-well lasers for optoelectronic integrated circuits (ICs) including physical effect of deep-level traps;IEEE Journal of Quantum Electronics;2002-11

4. Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers;Applied Physics Letters;2000-03-20

5. Carrier capture and escape processes in In/sub 0.25/Ga/sub 0.75/As-GaAs quantum-well lasers;IEEE Photonics Technology Letters;1999-07

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