InGaAs/GaAsP quantum wells for hot carrier solar cells-Reference-Cited by-同舟云学术

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InGaAs/GaAsP quantum wells for hot carrier solar cells

Published:2012-02-09 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Hirst Louise C.,Fürher Markus,Farrell Daniel J.,Le Bris Arthur,Guillemoles Jean-François,Tayebjee Murad J. Y.,Clady Raphael,Schmidt Timothy W.,Sugiyama Masakazu,Wang Yunpeng,Fujii Hiromasa,Ekins-Daukes Nicholas J.

Publisher

SPIE

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells;Progress in Photovoltaics: Research and Applications;2022-03-17

2. Hot-carrier optoelectronic devices based on semiconductor nanowires;Applied Physics Reviews;2021-06

3. A review on thermalization mechanisms and prospect absorber materials for the hot carrier solar cells;Solar Energy Materials and Solar Cells;2021-06

4. Quantum transport simulation of hot carrier photocurrent generation in quantum well solar cells;Semiconductor Science and Technology;2019-08-28

5. Slowed hot carrier cooling in multiple quantum wells for application to hot carrier solar cells;Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII;2019-02-27

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