Extreme UV self-aligned double patterning process optimization for BEOL interconnections on 3nm nodes and beyond-Reference-Cited by-同舟云学术

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Extreme UV self-aligned double patterning process optimization for BEOL interconnections on 3nm nodes and beyond

Published:2024-04-09 Issue: Volume: Page:21
ISSN:
Container-title:Advanced Etch Technology and Process Integration for Nanopatterning XIII
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Author:

Montero Alvarez Daniel,Buccheri Nunzio,Lin Quyang,Roy Syamashree,Paolillo Sara,Wu Chen,Hermans Yannick,Decoster Stefan,Baudemprez Bart,Finoulst Jan-Frederik,Lazzarino Frédéric,Park Seongho,Tokei Zsolt

Publisher

SPIE

Reference10 articles.

1. Investigation of low-n mask in 0.33 NA EUV single patterning at pitch 28nm metal design

2. Exploration of EUV-based self-aligned multipatterning (SAMP) options targeting pitches below 20nm

3. Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration

4. BEOL N2: M2 through SAxP process from MP21 to MP26: 193i SAQP vs EUV SADP

5. Need for LWR metrology standardization: the imec roughness protocol

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