Transverse Mode Stabilized 670Nm Atgainp Visible-Light Laser Diodes
Author:
Affiliation:
1. NEC Corporation (Japan)
Publisher
SPIE
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical gain analysis of GaInP/AlGaInP nanoscale heterostructure for applications in visible light emission;Materials Today: Proceedings;2022
2. Increased Catastrophic-Optical-Damage Output Power for High-Power Semiconductor Lasers Coated with High-Refractive-Index Films;Japanese Journal of Applied Physics;1998-06-01
3. Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP;Journal of Applied Physics;1996-05-01
4. 30-mW 690-nm high-power strained-quantum-well AlGaInP laser;IEEE Journal of Quantum Electronics;1993-06
5. AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates;IEEE Journal of Quantum Electronics;1993-06
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