EUV mask pilot line at Intel Corporation-Reference-Cited by-同舟云学术

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EUV mask pilot line at Intel Corporation

Published:2004-12-06 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Stivers Alan R.,Yan Pei-Yang,Zhang Guojing,Liang Ted,Shu Emily Y.,Tejnil Edita,Lieberman Barry,Nagpal Rajesh,Hsia Kangmin,Penn Michael,Lo Fu-Chang

Publisher

SPIE

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of full-field patterning of 32 nm test chips using EUVL;Alternative Lithographic Technologies;2009-03-13

2. Rigorous electromagnetic simulation of mask magnification effects on the diffracted light for EUV binary mask;Microelectronic Engineering;2007-05

3. Extreme ultraviolet lithography: A review;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

4. EUV mask process development and integration;SPIE Proceedings;2006-05-04

5. Exposing extreme ultraviolet lithography at Intel;Microelectronic Engineering;2006-04

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