Short wavelength limitation in high power AlGaInP laser diodes-Reference-Cited by-同舟云学术

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Short wavelength limitation in high power AlGaInP laser diodes

Published:2011-02-10 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Nishida Takehiro,Shimada Naoyuki,Ogawa Tetsuya,Miyashita Motoharu,Yagi Tetsuya

Publisher

SPIE

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of high power AlGaInP laser diodes at 626 nm;Optical and Quantum Electronics;2024-01-27

2. High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices;Photonics;2022-06-21

3. Composition and Interface Research on Quantum Well Intermixing Between a Tensile GaInP Quantum Well and Compressed AlGaInP Barriers;Journal of Electronic Materials;2022-06-07

4. 635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power;Advances in Display Technologies XII;2022-03-04

5. Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness;High-Power Diode Laser Technology and Applications XIII;2015-04-01

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