Reappraisal Of GaAs-AlGaAs Quantum Well Lasers
Author:
Affiliation:
1. Philips Research Laboratories (England)
Publisher
SPIE
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Role of Spontaneous Emission in Laser Diode Operation;Devices Based on Low-Dimensional Semiconductor Structures;1996
2. Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers;Philips Journal of Research;1995-01
3. Line broadening due to carrier-carrier scattering in quantum well heterostructures;Semiconductor Science and Technology;1993-05-01
4. Density dependence of the electron-hole plasma lifetime in semiconductor quantum wells;Physical Review B;1992-10-15
5. Measurement and calculation of spontaneous recombination current and optical gain in GaAs‐AlGaAs quantum‐well structures;Journal of Applied Physics;1991-08
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