Monolithic integration of III-V materials and devices on silicon-Reference-Cited by-同舟云学术

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Monolithic integration of III-V materials and devices on silicon

Published:1999-03-19 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Ting Steve,Bulsara Mayank T.,Yang Vicky,Groenert Mike,Samavedam Srikanth,Currie Matt,Langdo Thomas,Fitzgerald Eugene A.,Joshi Abhay M.,Brown Rene,Wang Xinde,Sieg Robert M.,Ringel Steven A.

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development Status of Key Technologies for Optoelectronic Integrated Circuit Manufacturing;Applied Sciences;2024-09-09

2. Perspective: The future of quantum dot photonic integrated circuits;APL Photonics;2018-03

3. InAs film grown on Si(111) by metal organic vapor phase epitaxy;Journal of Physics: Conference Series;2008-03-01

4. Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded Ge[sub x]Si[sub 1−x] buffer layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

5. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers;Journal of Applied Physics;2003-01

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