940nm high-power laser diode based on AlGaAs/InGaAs GRIN-SCH and asymmetric structure-Reference-Cited by-同舟云学术

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940nm high-power laser diode based on AlGaAs/InGaAs GRIN-SCH and asymmetric structure

Published:2019-03-04 Issue: Volume: Page:
ISSN:
Container-title:High-Power Diode Laser Technology XVII
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Author:

Kwak Jeong-Geun,Seong Seunghyeon,Park Jong-Keun,Park Jeong-Hyun,Choi An-Sik,Kim Tae-Kyung

Publisher

SPIE

Reference7 articles.

1. Wide IR Illumination & Sensin Products from OSRAM;OSRAM Marketing,2016

2. Diode Lasers in Next-Generation 3D Sensing Applications;Lumentum Marketing,2018

3. Comparison of symmetric and asymmetric laser diodes for communication system;Afshih,1990

4. 830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diode With Improved Temperature and Divergence Characteristics;Chih-Tsang;IEEE J.Quantum Electonics,2013

5. Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-Arsenide separate confinement heterostructure infrared laser diodes with engineered the cladding layers;Physica B: Condensed Matter;2024-06

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