Study on restricting factors of practical k1 limit in 0.33NA EUV lithography-Reference-Cited by-同舟云学术

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Study on restricting factors of practical k1 limit in 0.33NA EUV lithography

Published:2017-05-05 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Koo Sunyoung¹,Lim Mijung¹,Lee Inhwan¹,Park Sarohan¹,Choi Jinwoo¹,Hyun Yoonsuk¹,Lim Chang-Moon¹

Affiliation:

1. SK Hynix, Inc. (Korea, Republic of)

Publisher

SPIE

Reference8 articles.

1. Extension of practical k1 limit in EUV lithpgraphy;Park,2016

2. EUV resolution enhancement techniques (RETs) for k1 0.4 and below;Hsu,2015

3. E. van Setten, “Edge placement error analysis for N7 logic patterning options”, 2015 International Symposium on EUV lithography

4. Mask-induced best-focus-shifts in DUV and EUV lithography;Erdmann,2015

5. ASML’s NXE platform performance and volume introduction;Peeters,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoresist and stochastic modeling;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-03-14

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