Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes-Reference-Cited by-同舟云学术

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Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes

Published:2009-02-12 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Braun Harald,Rogowsky Stephan,Schwarz Ulrich T.,Brüninghof Stefanie,Lell Alfred,Strauß Uwe

Publisher

SPIE

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mode Competition Between Longitudinal and Lateral Modes in III-Nitride Broad-Ridge Laser Diodes;IEEE Journal of Selected Topics in Quantum Electronics;2025-03

2. Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes;physica status solidi (a);2023-01-05

3. Lateral-longitudinal near field measurements of 10 micrometer broad ridge blue laser diodes;Gallium Nitride Materials and Devices XVII;2022-03-05

4. Realization of GaN-based gain-guided blue laser diodes by helium ion implantation;Semiconductor Science and Technology;2019-10-03

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