Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assembly-Reference-Cited by-同舟云学术

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Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assembly

Published:2014-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Yu Hao Yun,Liu Chun-Hung,Shen Yu Tian,Lee Hsuan-Ping,Tsai Kuen Yu

Publisher

SPIE

Reference28 articles.

1. International technology roadmap for semiconductors, “2011 tables of Lithography,” in ITRS, 2011th Ed, ITRS (2011).

2. Shaped E-beam lithography integration work for advanced ASIC manufacturing: progress report;Pain,2002

3. Application and evaluation of direct-write electron beam for ASICs

4. Multiple electron-beam lithography;Chang,2001

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sequential Brush Grafting for Chemically and Dimensionally Tolerant Directed Self-Assembly of Block Copolymers;ACS Applied Materials & Interfaces;2022-12-19

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