N-doped Sn15Sb85 thin films for high speed and high thermal stability phase change memory application
Author:
Affiliation:
1. Jiangsu Univ. of Technology (China)
2. Shanghai Institute of Microsystem and Information Technology (China)
Publisher
SPIE
Reference18 articles.
1. W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
2. Structural and compositional evolution of carbon-doped Ge2Sb2Te5 film under different annealing conditions
3. Characterization of In20Ge15Sb10Te55 Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention,;Morikawa,2012
4. N-doped Zn15Sb85 phase-change materials for higher thermal stability and lower power consumption
5. High thermal stability Sb3Te-TiN2 material for phase change memory application
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85 thin film;Nanotechnology;2023-04-12
2. Investigation of thermal stability and crystallization mechanism of Er0.03(GeTe)0.97 phase change material;Semiconductor Science and Technology;2022-12-05
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