Effect of current crowding on the ideality factor in MQW InGaN/GaN LEDs on sapphire substrates
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SPIE
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ultra-bright green InGaN micro-LEDs with brightness over 10M nits;Optics Express;2022-03-11
2. 18.5: Size‐dependence Characterization of GaN‐based Green Micro‐LED;SID Symposium Digest of Technical Papers;2021-08
3. P‐61: Size‐Dependence Characterization of GaN‐Based Green MicroLED;SID Symposium Digest of Technical Papers;2021-05
4. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates;physica status solidi (a);2016-06-27
5. Do we need to recalibrate our strategy in InGaN-on-SiC LED technology given its low efficiency?;SPIE Proceedings;2016-03-08
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