Fabrication and improvement of nanopillar InGaN / GaN light-emitting diodes using nanosphere lithography-Reference-Cited by-同舟云学术

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Fabrication and improvement of nanopillar InGaN / GaN light-emitting diodes using nanosphere lithography

Published:2015-08-07 Issue:1 Volume:9 Page:093062
ISSN:1934-2608
Container-title:Journal of Nanophotonics
language:en
Short-container-title:J. Nanophoton

Author:

Fadil Ahmed¹,Ou Yiyu¹,Zhan Teng²,Wu Kaiyu³,Suyatin Dmitry⁴,Lu Weifang¹,Petersen Paul Michael¹,Liu Zhiqiang²,Ou Haiyan¹

Affiliation:

1. Technical University of Denmark, DTU Fotonik, Ørsteds Plads 343, 2800 Kongens Lyngby, Denmark

2. Chinese Academy of Sciences, Institute of Semiconductors, A35 Qinghua East Road, Haidian, Beijing 100083, China

3. Technical University of Denmark, DTU Nanotech, Ørsteds Plads 345, 2800 Kongens Lyngby, Denmark

4. Lund University, Division of Solid State Physics and The Nanometer Structure Consortium, Box 118, SE-22100 Lund, Sweden

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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1. Enabling Localized Surface Plasmon Emission from InGaN/GaN Nano-LEDs Integrated with Ag/SiO₂ Nanoparticles;ACS Photonics;2024-01-12

2. Morphology-dependent high antireflective surfaces via anodic aluminum oxide nanostructures;Applied Surface Science;2019-12

3. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes;Journal of Alloys and Compounds;2019-08

4. InGaN/GaN QDs Nanorods: Processing and Properties;Semiconductors;2018-12

5. Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures;Journal of Physics D: Applied Physics;2018-05-23

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