High-power AlGaInP laser diodes with current-injection-free region near the laser facet
Author:
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Engineering,Atomic and Molecular Physics, and Optics
Reference5 articles.
1. Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
2. Highly reliable 60/spl deg/C 50-mW operation of 650-nm band window-mirror laser diodes
3. Fundamental transverse mode 100-mW semiconductor laser with high reliability
4. High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets
5. Highly reliable operation at 80°C for 650 nm 5 mW AlGaInP LDs
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3. Research Progress of Red Semiconductor Laser Diodes for Laser Display;Laser & Optoelectronics Progress;2019
4. Structural Defects in GaN-Based Materials and Their Relation to GaN-Based Laser Diodes;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23
5. Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes;Proceedings of the IEEE;2010-07
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