Fabrication of the drift-enhanced InGaAs p-i-n photodetectors-Reference-Cited by-同舟云学术

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Fabrication of the drift-enhanced InGaAs p-i-n photodetectors

Published:2019-03-12 Issue: Volume: Page:
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Container-title:Fifth Symposium on Novel Optoelectronic Detection Technology and Application
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Author:

Li Guanyu,Niu Bin,Gu Xiaowen,Wang Yuan,Kong Yuechan

Publisher

SPIE

Reference10 articles.

1. InP-Based High-Speed Photodetectors

2. 110-GHz GaInAs/InP double heterostructure p-i-n photodetectors

3. InGaAs-based high-performance p-i-n photodiodes

4. InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz

5. High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon hybrid photodetector based on die-to-die bonding;Sixth Symposium on Novel Optoelectronic Detection Technology and Applications;2020-04-17

2. High-speed InGaAs drift-enhanced photodetectors;Sixth Symposium on Novel Optoelectronic Detection Technology and Applications;2020-04-17

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