Focus shift impacted by mask 3D and comparison between Att. PSM and OMOG-Reference-Cited by-同舟云学术

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Focus shift impacted by mask 3D and comparison between Att. PSM and OMOG

Published:2015-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Liu Yansong,Su Xiaojing,Dong LiSong,Song Zhiyang,Guo Moran,Su Yajuan,Wei Yayi

Publisher

SPIE

Reference5 articles.

1. OMOG mask topography effect on lithography modeling of 32nm contact hole patterning

2. Lithographic qualification of new opaque MoSi binary mask blank for the $32 - nm$ node and beyond

3. Alternating Phase Shift Mask and Binary Mask for 45 –nm Node and Beyond: The Impact on the Mask Error Control;Kojima,2007

4. Characterization of Binary and Attenuated Phase Shift Mask Blanks for 32nm Mask Fabrication;Faure,2008

5. Optical Performance Comparison between Negative Tone Development and Positive Tone Development;Yang,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-11

2. СПЕЦИФИКА ПЕРЕХОДА К ТЕХНОЛОГИИ «28 НМ» В ЧАСТИ РАЗРАБОТКИ ФОТОШАБЛОНОВ ДЛЯ ПРОЕКЦИОННОЙ ФОТОЛИТОГРАФИИ, "Электронная техника. Серия 3. Микроэлектроника";Электронная техника. Серия 3. Микроэлектроника;2022

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